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Shanghai GaNova Electronic Information Co., Ltd.
Shanghai , China
5.0
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Ga2O3 Wafer ( 13 )
Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System
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150mm Rapid Thermal Annealing System With Three Sets Process Gases
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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm
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Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate
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Semiconductor Single Crystal Gallium Oxide Substrate UID Doping
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10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing
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Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch
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Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2
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Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing
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GaN Epitaxial Wafer
2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
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SiC Epitaxial Wafer
Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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GaAs Epi Wafer
2inch GaAs Epi Wafer GaAs Undoped Substrates VGF
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S-C-N Conduct 2inch GaAs Undoped Substrates High Electron Mobility
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CVD Diamond Substrates
Electronic Grade CVD Diamond Substrates Dielectric Constant 5.5
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XRD
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Rapid Thermal Annealing System
Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System
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150mm Rapid Thermal Annealing System With Three Sets Process Gases
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