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China P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices China P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices China P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices China P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices China P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

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PRODUCT DESCRIPTION
Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Crystal Form 4H-N/S
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China factory - Shanghai GaNova Electronic Information Co., Ltd.
Shanghai GaNova Electronic Information Co., Ltd.
Shanghai , China
5.0
Verified Supplier
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China P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices
P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices
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ABOUT US
China factory - Shanghai GaNova Electronic Information Co., Ltd.
Shanghai GaNova Electronic Information Co., Ltd.
Shanghai , China
5.0
Verified Supplier
Company Name Shanghai GaNova Electronic Information Co., Ltd.
Business Type Manufacturer
Brands GaNova
Employee Number >100
Year Established 2020
Company Location Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Factory Location Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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PRODUCT DESCRIPTION