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China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

MOQ： 100
Price： Depends on size and quantity
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PRODUCT DESCRIPTION
Payment Terms T/T, Western Union,Paypal
Supply Ability 500,000pcs per month
Delivery Time 8~10 working days
Packaging Details Singer Wafer in 100 Grade Cleaning Room
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China factory - Shenzhen A.N.G Technology Co., Ltd
Shenzhen A.N.G Technology Co., Ltd
Guangdong , China
5.0
Site Member
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China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
MOQ： 100
Price： Depends on size and quantity
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ABOUT US
China factory - Shenzhen A.N.G Technology Co., Ltd
Shenzhen A.N.G Technology Co., Ltd
Guangdong , China
5.0
Site Member
Company Name Shenzhen A.N.G Technology Co., Ltd
Business Type Manufacturer,Distributor/Wholesaler,Exporter,Trading Company,Seller
Brands A.N.G or OEM
Employee Number 100~150
Year Established 2010
Total Sales Annual 5,000,000-6,000,000
Company Location Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109
Factory Location Building E, Longjing Industrial Park, Bantian Street, Longgang District, Shenzhen, China
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PRODUCT DESCRIPTION