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China GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And China GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And China GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And China GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And

GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And

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PRODUCT DESCRIPTION
Payment Terms T/T
Delivery Time 2-4 weeks
Dimension 1" diameter or 25.4 +/- 0.5 mm
Thickness 350 +/- 50 um
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China factory - SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai , China
5.0
Verified Supplier
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China GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And
GaN Gallium Nitride Wafer High Electron Mobility RF Devices Optoelectronics And
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ABOUT US
China factory - SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai , China
5.0
Verified Supplier
Company Name SHANGHAI FAMOUS TRADE CO.,LTD
Business Type Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established 2013
Total Sales Annual 1000000-1500000
Company Location Rm5-616，NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Factory Location Floor3;No.3 Building; Liaokenglong industrial park; Baoan Distract; Shenzhen City.
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PRODUCT DESCRIPTION