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China SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace China SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace China SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace China SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace China SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace

SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace

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PRODUCT DESCRIPTION
Payment Terms T/T
Delivery Time 6-8 month
Vacuum Leakage Rate ≤ 5 Pa/12 h (after bake-out)
Crucible Diameter Ø 400 mm
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China factory - SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai , China
5.0
Verified Supplier
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China SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace
SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace
MOQ： 1
Price：
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ABOUT US
China factory - SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai , China
5.0
Verified Supplier
Company Name SHANGHAI FAMOUS TRADE CO.,LTD
Business Type Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established 2013
Total Sales Annual 1000000-1500000
Company Location Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Factory Location Floor3;No.3 Building; Liaokenglong industrial park; Baoan Distract; Shenzhen City.
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PRODUCT DESCRIPTION